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Upgraded silicon nanowires by metal-assisted etching of metallurgical silicon: a new route to nanostructured solar-grade silicon.
|Title||Upgraded silicon nanowires by metal-assisted etching of metallurgical silicon: a new route to nanostructured solar-grade silicon.|
|Publication Type||Journal Article|
|Year of Publication||2013|
|Authors||Li X, Xiao Y, Bang JH, Lausch D, Meyer S, Miclea P-T, Jung J-Y, Schweizer SL, Lee J-H, Wehrspohn RB|
|Journal||Advanced materials (Deerfield Beach, Fla.)|
|Date Published||2013 Jun 18|
Through metal-assisted chemical etching (MaCE), superior purification of dirty Si is observed, from 99.74 to 99.9884% for metallurgical Si and from 99.999772 to 99.999899% for upgraded metallurgical Si. In addition, large area of silicon nanowires (SiNW) are fabricated. The purification effect induces a ∼35% increase in photocurrent for SiNW based photoelectrochemical cell.
|Alternate Journal||Adv. Mater. Weinheim|