Upgraded silicon nanowires by metal-assisted etching of metallurgical silicon: a new route to nanostructured solar-grade silicon.

TitleUpgraded silicon nanowires by metal-assisted etching of metallurgical silicon: a new route to nanostructured solar-grade silicon.
Publication TypeJournal Article
Year of Publication2013
AuthorsLi X, Xiao Y, Bang JH, Lausch D, Meyer S, Miclea P-T, Jung J-Y, Schweizer SL, Lee J-H, Wehrspohn RB
JournalAdvanced materials (Deerfield Beach, Fla.)
Volume25
Issue23
Pagination3187-91
Date Published2013 Jun 18
Abstract

Through metal-assisted chemical etching (MaCE), superior purification of dirty Si is observed, from 99.74 to 99.9884% for metallurgical Si and from 99.999772 to 99.999899% for upgraded metallurgical Si. In addition, large area of silicon nanowires (SiNW) are fabricated. The purification effect induces a ∼35% increase in photocurrent for SiNW based photoelectrochemical cell.

DOI10.1093/jac/dkt230
Alternate JournalAdv. Mater. Weinheim