The periodicity effect on the charge storage characteristic of multistacked nc-Si floating gate.

TitleThe periodicity effect on the charge storage characteristic of multistacked nc-Si floating gate.
Publication TypeJournal Article
Year of Publication2013
AuthorsMa Z, Liu G, Jiang X, Xia G, Yan M, Li W, Chen K, Xu L, Xu J, Feng D
JournalJournal of nanoscience and nanotechnology
Volume13
Issue2
Pagination997-1000
Date Published2013 Feb
Abstract

Nanocrystalline (nc)-Si/SiO2 multistacked floating gate have been prepared by electron beam evaporation of SiO(x) and SiO2 followed by thermal annealing. HRXTEM reveals that the density of multiply stacked nc-Si quantum dots reaches 9.1 x 10(11) cm(-2) with size of 2-3 nm. The periodicity effect of nc-Si/SiO2 multilayers on the charge storage characteristics of nc-Si floating gate is investigated carefully by using capacitance-voltage (C-V) and conductance-voltage (G-V) measurements at room temperature. It is found the charge storage ability enhances obviously with the periodicity of the multiply stacked nc-Si layer increasing from 2 to 9. The up limit of the thickness for multistacked nc-Si/SiO2 layer is less than 100 nm, which is close to the mean free path of electron in multistacked nc-Si. Charge diffusion among the multistacked nc-Si quantum dots is used to explain the charge storage and retention characteristics.

DOI10.1111/tpj.12228
Alternate JournalJ Nanosci Nanotechnol