Growth and large-scale assembly of InAs/InP core/shell nanowire: effect of shell thickness on electrical characteristics.

TitleGrowth and large-scale assembly of InAs/InP core/shell nanowire: effect of shell thickness on electrical characteristics.
Publication TypeJournal Article
Year of Publication2013
AuthorsLiu X, Liu P, Huang H, Chen C, Jin T, Zhang Y, Huang X, Jin Z, Li X, Tang Z
JournalNanotechnology
Volume24
Issue24
Pagination245306
Date Published2013 Jun 21
Abstract

InAs/InP core/shell nanowires with different shell thicknesses were grown by a two-step method, and large-scale assembly of single nanowire was realized by using dielectrophoresis alignment and patterned grooves. Thousands of single nanowire field-effect transistors were fabricated on a single chip. The effect of InP shell thickness on the electron mobility and density of InAs nanowires are experimentally investigated and discussed.

DOI10.1021/la401531r
Alternate JournalNanotechnology