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Growth and large-scale assembly of InAs/InP core/shell nanowire: effect of shell thickness on electrical characteristics.
|Title||Growth and large-scale assembly of InAs/InP core/shell nanowire: effect of shell thickness on electrical characteristics.|
|Publication Type||Journal Article|
|Year of Publication||2013|
|Authors||Liu X, Liu P, Huang H, Chen C, Jin T, Zhang Y, Huang X, Jin Z, Li X, Tang Z|
|Date Published||2013 Jun 21|
InAs/InP core/shell nanowires with different shell thicknesses were grown by a two-step method, and large-scale assembly of single nanowire was realized by using dielectrophoresis alignment and patterned grooves. Thousands of single nanowire field-effect transistors were fabricated on a single chip. The effect of InP shell thickness on the electron mobility and density of InAs nanowires are experimentally investigated and discussed.