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Bipolar one diode-one resistor integration for high-density resistive memory applications.
|Title||Bipolar one diode-one resistor integration for high-density resistive memory applications.|
|Publication Type||Journal Article|
|Year of Publication||2013|
|Authors||Li Y, Lv H, Liu Q, Long S, Wang M, Xie H, Zhang K, Huo Z, Liu M|
|Date Published||2013 Jun 7|
Different from conventional unipolar-type 1D-1R RRAM devices, a bipolar-type 1D-1R memory device concept is proposed and successfully demonstrated by the integration of Ni/TiOx/Ti diode and Pt/HfO2/Cu bipolar RRAM cell to suppress the undesired sneak current in a cross-point array. The bipolar 1D-1R memory device not only achieves self-compliance resistive switching characteristics by the reverse bias current of the Ni/TiOx/Ti diode, but also exhibits excellent bipolar resistive switching characteristics such as uniform switching, satisfactory data retention, and excellent scalability, which give it high potentiality for high-density integrated nonvolatile memory applications.